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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2580 DESCRIPTION With TO-3PN package Complement to type 2SA1105 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 180 120 6 9 UNIT V V V A W ae ae Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae 90 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC2580 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 120 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V ICBO Collector cut-off current VCB=180V; IE=0 100 |I A IEBO Emitter cut-off current VEB=6V; IC=0 100 |I A hFE DC current gain IC=3A ; VCE=4V 50 fT Transition frequency IC=0.5A ; VCE=10V CHA IN E SEM NG OND IC TOR UC 20 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2580 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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